STT4PF20V| Datasheet

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P-CHANNEL 20V - 0.090 - 3A SOT23-6L 2.7V-DRIVE STripFETTM II POWER MOSFET
TYPE STT4PF20V
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STT4PF20V

VDSS 20 V

RDS(on) < 0.11 ( @ 4.5 V ) < 0.135 ( @ 2.7 V )

ID 3A

TYPICAL RDS(on) = 0.090 @ 4.5 V TYPICAL RDS(on) = 0.100 @ 2.7 V ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SOT23-6L

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s MOBILE PHONE APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM( ) Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25 C Drain Current (continuous) at TC = 100 C Drain Current (pulsed) Total Dissipation at TC = 25 C Value 20 20 10 3 1.9 12 1.6 Unit V V V A A A W

( ) Pulse width limited by safe operating area. May 2003
.

Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

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