STT818B| Datasheet

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STT818B
High gain low voltage PNP power transistor
Features

Very low collector to emitter saturation voltage DC current gain > 100 (hFE) 3 A continuous collector current (IC)

Applications

Power management in portable equipments Switching regulator in battery charger applications

SOT23-6L

Description
The device is manufactured in low voltage PNP Planar Technology with "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. Figure 1. Internal schematic diagram

Table 1.

Device summary
Marking 818B Package SOT23-6L Packaging Tape & reel

Order code STT818B

August 2007

Rev 5

1/10
www.st.com 10

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STT818B DATASHEET