STTH12S06| Datasheet

STTH12S06, STTH12S06FP

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STTH12S06
Turbo 2 ultrafast high voltage rectifier
Table 1. Main product characteristics
IF(AV) VRRM IRM (typ.) Tj (max) VF (typ) trr (typ) 12 A 600 V 6A 175 C 1.5 V 14 ns A K TO-220FPAC STTH12S06FP

Features and benefits

Ultrafast recovery Low reverse recovery current Reduces losses in diode and switching transistor Low thermal resistance Higher frequency operation Insulated voltage: 1500 VRMS

Description
ST's STTH12S06 is a state of the art Ultrafast recovery diode. By the use of 600 V Pt doping Planar technology, this diode will outperform the power factor correction circuits operating in hardswitching conditions. The extremely low reverse recovery current of the STTH12S06, reduces significantly the switching power losses of the MOSFET, and thus increases the Table 2.
Symbol VRRM IF(AV) IFSM Tstg Tj Repetitive peak reverse voltage Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal

efficiency of the application. This allows designers to reduce the size of their heatsinks. This device is also intended for applications in power supplies and power conversions systems, and other power switching applications.

Absolute ratings (limiting values at 125 C, unless otherwise stated)
Parameter Value 600 12 100 - 65 + 175 175 Unit V A A C C

October 2007

Rev 1

1/6
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