STTH1506D| Datasheet

STTH1506D, STTH1506DPI

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STTH1506DPI
Tandem 600V HYPERFAST BOOST DIODE

MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) IRM (typ.) trr (typ.) 15 A 600 V 150 C 2.4 V 4.8 A 16 ns
1 2
1 2

FEATURES AND BENEFITS ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS DESIGNED FOR HIGH DI/DT OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SIC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES INSULATION (2500VRMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET AND FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN PACKAGE CAPACITANCE: C=16pF
s s s s s s

DOP3I (insulated)

DESCRIPTION The TURBOSWITCH "H" is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH "H" family drastically cuts losses in the associated MOSFET when run at high dIF/dt.

ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IFSM Ipeak Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current Peak current waveform Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal = 0.15 Tc = 120 C Value 600 26 130 35 -65 +150 + 150 Unit V A A A C C

October 2003 - Ed: 2A

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