STW55NM60N| Datasheet

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STW55NM60N
N-channel 600 V - 0.047 - 51 A - TO-247 second generation MDmeshTM Power MOSFET
Features
Type STW55NM60N

VDSS (@Tjmax) 650 V

RDS(on) max < 0.060

ID 51 A

100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247
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Application

Switching applications

Description
This series of devices is designed using the second generation of MDmeshTM Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram

Table 1.

Device summary
Marking W55NM60N Package TO-247 Packaging Tube

Order code STW55NM60N

January 2008

Rev 3

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