STW55NM60ND| Datasheet

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STW55NM60ND
N-channel 600 V - 0.047 - 51 A TO-247 FDmeshTM II Power MOSFET (with fast diode)
Preliminary Data

Features
Type STW55NM60ND

VDSS 600 V

RDS(on)

< 0.060 51 A 350 W

The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247 100% avalanche tested Low input capacitance and gate charge Low gate input resistance High dv/dt and avalanche capabilities
1 2 3

TO-247

Application

Switching applications

Figure 1.

Internal schematic diagram

Description
The FDmeshTM II series belongs to the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

Table 1.

Device summary
Marking 55NM60ND Package TO-247 Packaging Tube

Order codes STW55NM60ND

November 2007

Rev 1

1/9
www.st.com 9

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.