STW81101, STW81101AT
Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)
STW81101
Multi-band RF frequency synthesizer with integrated VCOs
Features
Integer-N frequency synthesizer Dual differential integrated VCOs with automatic center frequency calibration: 3300 - 3900 MHz (direct output) 3800 - 4400 MHz (direct output) 1650 - 1950 MHz (internal divider by 2) 1900 - 2200 MHz (internal divider by 2) 825 - 975 MHz (internal divider by 4) 950 - 1100 MHz (internal divider by 4) Excellent integrated phase noise Fast lock time: 150 us Dual modulus programmable prescaler (16/17 or 19/20) 2 programmable counters to achieve a feedback division ratio from 256 to 65551 (prescaler 16/17) and from 361 to 77836 (prescaler 19/20). Programmable reference frequency divider (10 bits) Phase frequency comparator and charge pump Programmable charge pump current Digital lock detector Dual digital bus Interface: SPI and I C bus with a 3-bit programmable address (1100A2A1A0) 3.3 V power supply Power down mode (hardware and software) Small size exposed pad VFQFPN28 package 5 x 5 x 1.0 mm Process: BICMOS 0.35 um SiGe
2
Applications
2.5G and 3G cellular infrastructure equipment CATV equipment Instrumentation and test equipment Other wireless communication systems
Description
The STMicroelectronics STW81101 is an integrated RF synthesizer with voltage controlled oscillators (VCOs). Showing high performance, high integration, low power, and multi-band performances, STW81101 is a low-cost one-chip alternative to discrete PLL and VCO solutions. The STW81101 includes an integer-N frequency synthesizer and two fully integrated VCOs featuring low phase-noise performance and a noise floor of -155 dBc/Hz. The combination of wide frequency range VCOs (using centerfrequency calibration over 32 sub-bands) and multiple output options (direct output, divided by 2, or divided by 4) allows coverage of the 825 MHz-1100 MHz, 1650 MHz-2200 MHz and 3300 MHz-4400 MHz bands. The STW81101 is designed with STMicroelectronics advanced 0.35 um SiGe process.
February 2008
Rev 4
1/53
www.st.com 1

Recent comments
3 hours 52 min ago
15 hours 32 min ago
2 weeks 2 days ago
2 weeks 2 days ago
3 weeks 2 days ago
3 weeks 2 days ago
3 weeks 6 days ago
4 weeks 14 hours ago
4 weeks 19 hours ago
4 weeks 23 hours ago