STW81102| Datasheet

STW81102, STW81102AT

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STW81102
Multi-band RF frequency synthesizer with integrated VCOs
Features

Integer-N frequency synthesizer Dual differential integrated VCOs with automatic center frequency calibration: 3000 - 3620 MHz (direct output) 4000 - 4650 MHz (direct output) 1500 - 1810 MHz (internal divider by 2) 2000 - 2325 MHz (internal divider by 2) 750 - 905 MHz (internal divider by 4) 1000 - 1162.5 MHz (internal divider by 4) Excellent integrated phase noise Fast lock time: 150 us Dual modulus programmable prescaler (16/17 or 19/20) 2 programmable counters to achieve a feedback division ratio from 256 to 65551 (prescaler 16/17) and from 361 to 77836 (prescaler 19/20). Programmable reference frequency divider (10 bits) Phase frequency comparator and charge pump Programmable charge pump current Digital lock detector Dual digital bus Interface: SPI and I2C bus with 3 bit programmable address (1100A2A1A0) 3.3V power supply Power down mode (HW and SW) Small size exposed pad VFQFPN28 package 5x5x1.0mm Process: BICMOS 0.35 um SiGe

Applications

2.5G and 3G cellular infrastructure equipment CATV equipment Instrumentation and test equipment Other wireless communication systems

Description
The STMicroelectronics STW81102 is an integrated RF synthesizer with voltage controlled oscillators (VCOs). Showing high performance, high integration, low power, and multi-band performances, the STW81102 is a low-cost onechip alternative to discrete PLL and VCOs solutions. The STW81102 includes an Integer-N frequency synthesizer and two fully integrated VCOs featuring low phase noise performance and a noise floor of -155 dBc/Hz. The combination of wide frequency range VCOs (using center-frequency calibration over 32 subbands) and multiple output options (direct output, divided by 2 or divided by 4) allows coverage from 750 MHz to 905 MHz and 1000MHz to 1162.5 MHz, from 1500MHz to 1810 MHz and 2000 MHz to 2325MHz, from 3000 MHz to 3620 MHz and 4000MHz to 4650 MHz bands. The STW81102 is designed with STMicroelectronics advanced 0.35um SiGe process.

January 2008

Rev 5

1/53
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