STX83003| Datasheet

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STX83003
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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ST83003 SILICON IN TO-92 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED

APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STX83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STX93003, its complementary PNP transistor. TO-92

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage o (I C = 0, I B = 0.5 A, t p < 10us, T j < 150 C) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T C = 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 V (BR)EBO 1 3 0.5 1.5 1.5 -65 to 150 150 Unit V V V A A A A W o C o C

October 2002

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