STX93003| Datasheet

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

STX93003
HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR

s s s s

ST93003 SILICON IN TO-92 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED

APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STX93003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STX83003, its complementary NPN transistor. TO-92

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) (I C = 0, I B = -0.5 A, t p < 10us, T j < 150 o C) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T C = 25 C Storage Temperature Max. Operating Junction Temperature
o

Value -500 -400 V (BR)EBO -1 -3 -0.5 -1.5 1.5 -65 to 150 150

Unit V V V A A A A
o o

W C C

October 2002

1/7