STY60NM50| Datasheet

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STY60NM50
N-CHANNEL 500V - 0.045 - 60A Max247 Zener-Protected MDmeshTMPower MOSFET
TYPE STY60NM50 VDSS 500V RDS(on) < 0.05 ID 60 A

TYPICAL RDS(on) = 0.045 HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL INDUSTRY'S LOWEST ON-RESISTANCE DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

2 1

Max247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25 C Drain Current (continuous) at TC = 100 C Drain Current (pulsed) Total Dissipation at TC = 25 C Gate source ESD(HBM-C=100pF, R=15K) Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 30 60 37.8 240 560 6 4.5 15 65 to 150 150
(1)ISD 60A, di/dt 400A/us, VDD V(BR)DSS, T j T JMAX

Unit V V V A A A W KV W/ C V/ns C C 1/8

( )Pulse width limited by safe operating area

November 2003