STY80NM60N| Datasheet

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STY80NM60N
N-channel 600 V - 0.035 - 80 A - Max247 second generation MDmeshTM Power MOSFET
Preliminary Data

Features
Type STY80NM60N

VDSS 600 V

RDS(on) < 0.040

ID 80 A

Pw 560 W

100% avalanche tested Low input capacitance and gate charge Low gate input resistance Max247
1 2 3

Application

Switching applications

Description
This series of devices implements second generation MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram

Table 1.

Device summary
Marking 80NM60N Package Max247 Packaging Tube

Order code STY80NM60N

December 2007

Rev 2

1/9
www.st.com 9

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.