TMBAT49, TMBAT49FILM

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TMBAT 49
SMALL SIGNAL SCHOTTKY DIODE

DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against excessive voltage such as electrostatic discharges. ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol VRRM IF IFRM IFSM Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current Repetitive Peak Forward Current Surge non Repetitive Forward Current Storage and Junction Temperature Range Maximum Temperature for Soldering during 15s Ti = 70 C tp = 1s 0.5 tp = 10ms

MELF (Glass)

Value 80 500 3 10 - 65 to + 150 - 65 to + 125 260

Unit V mA A A C C C

THERMAL RESISTANCE
Symbol Rth(j-l) Junction-leads Test Conditions Value 110 Unit C/W

ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS
Symbol IR * VF * Tj = 25 C Tj = 25 C Tj = 25 C Tj = 25 C Test Conditions VR = 80V IF = 10mA IF = 100mA IF = 1A Min. Typ. Max. 200 0.32 0.42 1 Unit uA V

DYNAMIC CHARACTERISTICS
Symbol C Tj = 25 C Test Conditions f = 1MHz VR = 0V VR = 5V
* Pulse test: tp 300us < 2%.

Min.

Typ. 120 35

Max.

Unit pF

August 1999 Ed 1A

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TMBAT49 DATASHEET