VNB10N07| Datasheet

VNB10N07, VNB10N0713TR, VNP10N07FI, VNV10N07, VNV10N0713TR

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VNB10N07/K10N07FM VNP10N07FI/VNV10N07
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET

TYPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07
s s s s s s

Vclamp 70 70 70 70 V V V V

R DS(on) 0.1 0.1 0.1 0.1

I lim 10 10 10 10 A A A A
3 1

s s

LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET

D2PAK TO-263

SOT82-FM

3 1 2

DESCRIPTION The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect BLOCK DIAGRAM ()

ISOWATT220

PowerSO-10

the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin.

() PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB

June 1998

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