VNB35N07| Datasheet

VNB35N07, VNB35N0713TR, VNP35N07FI, VNV35N07, VNV35N0713TR

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VNP35N07FI VNB35N07/VNV35N07
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET

TYPE VNP35N07FI VNB35N07 VNV35N07
s s s s s s

V clamp 70 V 70 V 70 V

R DS( on) 0.028 0.028 0.028

I lim 35 A 35 A 35 A

s s

LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET

ISOWATT220
1 2

3 1
1

DESCRIPTION The VNP35N07FI, VNB35N07 and VNV35N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh BLOCK DIAGRAM ()

D2PAK TO-263

PowerSO-10

enviroments. Fault feedback can be detected by monitoring the voltage at the input pin.

() PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB

June 1998

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