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VND10N06| Datasheet

By datasheet - April 3rd, 2008

VND10N06, VND10N06-1, VND10N0613TR, VNK10N06, VNK10N06FM, VNP10N06FI

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VND10N06/VND10N06-1 VNP10N06FI/K10N06FM
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET
TYPE VND10N06 VND10N06-1 VNP10N06FI VNK10N06FM
s s s s s s s s s

Vclamp 60 60 60 60 V V V V

R DS(on) 0.3 0.3 0.3 0.3

I lim 10 10 10 10 A A A A
3

3 2 1

LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN LOGIC LEVEL INPUT THRESHOLD ESD PROTECTION SCHMITT TRIGGER ON INPUT HIGH NOISE IMMUNITY

1

DPAK TO-252

IPAK TO-251

DESCRIPTION The VND10N06, VND10N06-1, VNP10N06FI and VNK10N06FM are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

3 1 2

ISOWATT220

SOT82-FM

BLOCK DIAGRAM (*)

() SOT82-FM Pin Configuration: INPUT = 3; SOURCE = 1; DRAIN = 2.

October 1997

1/14


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