Home

VND670| Datasheet

By datasheet - April 3rd, 2008

VND670, VND670SP, VND670SP13TR

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)


VND670SP

DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER (BRIDGE CONFIGURATION)
TYPE VND670SP
s s s

RDS(on) 30 m

IOUT 15 A

VDSS 40 V

OUTPUT CURRENT:15A PER CHANNEL
10

5V LOGIC LEVEL COMPATIBLE INPUTS GATE DRIVE FOR TWO EXTERNAL POWER MOS s UNDERVOLTAGE AND OVERVOLTAGE SHUT-DOWN s OVERVOLTAGE CLAMP s THERMAL SHUT DOWN s CROSS-CONDUCTION PROTECTION s CURRENT LIMITATION s VERY LOW STAND-BY POWER CONSUMPTION s PWM OPERATION UP TO 10 KHz s PROTECTION AGAINST: LOSS OF GROUND AND LOSS OF VCC s REVERSE BATTERY PROTECTION (*) DESCRIPTION The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge
BLOCK DIAGRAM

1

PowerSO-10TM

configuration. The device integrates two 30 m Power MOSFET in high side configuration, and provides gate drive for two external Power MOSFET used as low side switches. INA and INB allow to select clockwise or counter clockwise drive or brake; DIAGA/ENA, DIAGB/ENB allow to disable one half bridge and feedback diagnostic. Built-in thermal shut-down, combined with a current limiter, protects the chip in overtemperature and short circuit conditions. Short to battery protects the external connected low-side Power MOSFET.
VCC

Undervolt. IN A

INTERNAL SUPPLY OUTA

INB LOGIC

Short to battery

DIAGA/ENA

Short to battery DIAGB/EN B

OUTB

GATEA PWM Overtemp. A Overtemp. B Current Limiter B Current Limiter A GND GATEB

(*) See note at page 5

January 2003

1/14


VND670 Datasheet st Download PDF

Add this permalink to your bookmarks for future download of VND670 datasheet

Permalink: http://datasheet.emcelettronica.com/st/VND670

-->