2n70000k| Datasheet

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2N7000KL/BS170KL
Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY
VDS (V) 60 4 at VGS = 4.5 V rDS(on) () 2 at VGS = 10 V 1.0 to 2.5 0.33 VGS(th) (V) ID (A) 0.47

FEATURES
TrenchFET Power MOSFET

ESD Protected: 2000 V APPLICATIONS
Direct Logic-Level Interface: TTL/CMOS Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. Battery Operated Systems

Pb-free Available

RoHS*
COMPLIANT

TO-226AA (TO-92)
S 1 Device Marking Front View "S" 2N 7000KL xxyy "S" = Siliconix Logo xxyy = Date Code

TO-92-18RM (TO-18 Lead Form)
D 1 Device Marking Front View "S" BS 170KL xxyy "S" = Siliconix Logo xxyy = Date Code G

100

Top View

Ordering Information: 2N7000KL-TR1 Ordering Information: BS170KL-TR1 2N7000KL-TR1-E3 (Lead (Pb)-free) BS170KL-TR1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)b Pulsed Drain Currenta TA = 25 C TA = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limit 60 20 0.47 0.37 1.0 0.8 0.51 158 - 55 to 150 W C/W C A V Unit

Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes: a. Pulse width limited by maximum junction temperature.

* Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72705 S-72202-Rev. B, 22-Oct-07 www.vishay.com 1