70855| Datasheet

By datasheet - February 7th, 2009

70855| Datasheet

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Si4890DY
Vishay Siliconix

N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
30

rDS(on) (W)
0.012 @ VGS = 10 V 0.020 @ VGS = 4.5 V

ID (A)
"11 "9

D D

SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D N-Channel MOSFET G

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg

Symbol
VDS VGS

Limit
30 "25 "11 "9 "50 2.3 2.5 1.6 55 to 150

Unit
V

W _C

THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)a t v 10 sec Steady State Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70855 S-56948--Rev. A, 01-Feb-99 www.vishay.com S FaxBack 408-970-5600

Symbol
RthJA

Typical

Maximum
50

Unit
_C/W

2-1