71625| Datasheet

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Si7850DP
Vishay Siliconix

N-Channel 60-V (D-S) Fast Switching MOSFET

PRODUCT SUMMARY
VDS (V) 60 rDS(on) () 0.022 at VGS = 10 V 0.031 at VGS = 4.5 V ID (A) 10.3 8.7

FEATURES
TrenchFET Power MOSFET New Low Thermal Resistance PowerPAK Package with Low 1.07-mm Profile PWM Optimized for Fast Switching 100 % Rg Tested Lead (Pb)-free Version is RoHS Compliant
Pb-free Available

RoHS*
COMPLIANT

PowerPAK SO-8

APPLICATIONS
6.15 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G

5.15 mm

Primary Side Switch for 24-V DC/DC Applications Secondary Synchronous Rectifier
D

Bottom View S Ordering Information: Si7850DP-T1 Si7850DP-T1--E3 (Lead (Pb)-free) N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Continuous Source Current Pulsed Drain Current Avalanche Currentb Single Avalanche Energyb Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 C TA = 85 C TA = 25 C TA = 85 C Symbol VDS VGS ID IS IDM IAS EAS PD TJ, Tstg 10 secs Steady State 60 20 6.2 4.5 1.5 40 15 11 1.8 0.9 55 to 150 Unit V

10.3 7.5 3.7

mJ W C

4.5 2.3

THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) t 10 sec Steady State Steady State Symbol RthJA RthJC Typical 22 58 2.6 Maximum 28 70 3.3 Unit C/W

Notes a. Surface Mounted on 1" x 1" FR4 Board. b. Guaranteed by design, not subject to production testing. * Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 71625 S-52554-Rev. D, 19-Dec-05

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