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71690| Datasheet

By datasheet - February 7th, 2009

71690| Datasheet

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Si6880EDQ
New Product

Vishay Siliconix

N-Channel 1.8-V (G-S) Battery Switch, ESD Protection
PRODUCT SUMMARY
VDS (V) rDS(on) ()
0.018 @ VGS = 4.5 V 20 0.022 @ VGS = 2.5 V 0.026 @ VGS = 1.8 V

FEATURES
ID (A)
7.5 6.5 6.0

D TrenchFETr Power MOSFET D ESD Protected: 4000 V D Common Drain

APPLICATIONS
D 1-2 Cell Battery Protection Circuitry

D

D

TSSOP-8
D S1 S1 G1 1 2 3 4 Top View S1 N-Channel *Typical value by design N-Channel S2 D 8 D 7 S2 6 S2 5 G2 *1.5 kW G1 G2 *1.5 kW

Si6880EDQ

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS 1.6 1.78 1.14 55 to 150

Symbol
VDS VGS

10 secs
T20
"12 7.5 6 30

Steady State

Unit
V

6 5 A 1.08 1.19 0.76 W _C

THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec. Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain)a Steady State Steady State RthJA RthJF

Symbol

Typical
55 85 35

Maximum
70 105 45

Unit

_C/W

Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 71690 S-05238--Rev. B, 17-Dec-01 www.vishay.com

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