72029| Datasheet

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Si4835BDY
Vishay Siliconix

P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
-30

FEATURES
ID (A)
-9.6 -7.5

rDS(on) (W)
0.018 @ VGS = -10 V 0.030 @ VGS = -4.5 V

Qg (Typ)
-25

D TrenchFETr Power MOSFET D Advanced High Cell Density Process D 100% Rg Tested

APPLICATIONS
D Load Switches - Notebook PCs - Desktop PCs

SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G

D P-Channel MOSFET

Ordering Information: Si4835BDY Si4835BDY-T1 (with Tape and Reel) Si4835BDY--E3 (Lead (Pb)-Free) Si4835BDY-T1--E3 (Lead (Pb)-Free with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C

Symbol
VDS VGS ID IDM IS PD TJ, Tstg

10 secs

Steady State
-30 "25

Unit
V

-9.6 -7.7 -50 -2.1 2.5 1.6 -55 to 150

-7.4 -5.9 A

-1.3 1.5 0.9 W _C

THERMAL RESISTANCE RATINGS
Parameter
Maximum J M i Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72029 S-41912--Rev. D, 25-Oct-04 www.vishay.com t v 10 sec Steady State Steady State

Symbol
RthJA RthJF

Typical
39 70 18

Maximum
50 85 22

Unit

_C/W C/W