72310| Datasheet

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Si3586DV
New Product

Vishay Siliconix

N- and P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY
VDS (V) rDS(on) () 0.060 at VGS = 4.5 V N-Channel 20 0.070 at VGS = 2.5 V 0.100 at VGS = 1.8 V 0.110 at VGS = - 4.5 V P-Channel - 20 0.145 at VGS = - 2.5 V 0.220 at VGS = - 1.8V ID (A) 3.4 3.2 2.5 - 2.5 - 2.0 - 1.0

FEATURES
TrenchFET Power MOSFET Fast Switching In Small Footprint Very Low rDS(on) for Increased Efficiency

RoHS
COMPLIANT

APPLICATIONS
Load Switch for Portable Devices

TSOP-6 Top View
G1 1 6 D1

G2 3 mm S2 2 5 S1 G1

2.85 mm Ordering Information: Si3586DV-T1-E3 (Lead (Pb)-free)

S1 N-Channel MOSFET

D2 P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 C TA = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS PD TJ, Tstg 1.05 1.15 0.73 0.75 0.83 0.53 3.4 2.7 2.9 2.3 8 - 1.05 1.15 0.73 - 55 to 150 - 0.75 0.83 0.53 W C N-Channel 5 sec Steady State 20 8 - 2.5 - 2.0 - 2.1 - 1.7 A P-Channel 5 sec Steady State - 20 Unit V

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. t 5 sec Steady State Steady State Symbol RthJA RthJF Typical 93 130 90 Maximum 110 150 90 C/W Unit

Document Number: 72310 S-60422-Rev. C, 20-Mar-06

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