72775| Datasheet

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SUR50N03-16P
New Product

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
30

rDS(on) (W)
0.016 @ VGS = 10 V 0.024 @ VGS = 4.5 V

ID (A)a
15 12

D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested

APPLICATIONS
D DC/DC Converters - High-Side D Synchronous Rectifiers

TO-252 Reverse Lead DPAK

Drain Connected to Tab G D S

Top View Ordering Information: SUR50N03-16P--E3 SUR50N03-16P-T4--E3 (altrenate tape orientation) S N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0 1 mH 0.1 TC = 25_C TA = 25_C TA = 25_C TA = 100_C IDM IS IAS EAS PD TJ, Tstg ID

Symbol
VDS VGS

Limit
30 "20 36 15 10.6 40 5 25 31.25 40.8 6.5a -55 to 175

Unit
V

mJ W _C

THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 72775 S-32696--Rev. A, 19-Jan-04 www.vishay.com t v 10 sec Steady State

Symbol
RthJA RthJC

Typical
18 40 3.0

Maximum
23 50 3.7

Unit

_C/W C/W