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Specification Comparison
Vishay Siliconix

Si4501ADY vs. Si4501DY
Description: Complementary MOSFET Half-Bridge (N- and P-Channel) Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4501ADY Replaces Si4501DY Si4501ADY-E3 (Lead (Pb)-free version) Replaces Si4501DY Si4501ADY-T1 Replaces Si4501DY-T1 Si4501ADY-T1-E3 (Lead (Pb)-free version) Replaces Si4501DY-T1

ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TA = 25 C Continuous Drain Current TA = 70 C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25 C TA = 70 C IDM IS PD ID Symbol VDS VGS Channel N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Si4501ADY 30 -8 20 8 8.8 - 5.7 7.0 - 4.5 30 - 30 1.8 - 1.8 2.5 1.6 - 55 to 150 50 Si4501DY 30 -8 20 8 9.0 - 6.2 7.4 - 5.0 30 - 20 1.7 - 1.7 2.5 1.6 - 55 to 150 50 W C C/W Unit

Operating Junction and Storage Temperature Range Tj and Tstg Maximum Junction-to-Ambient RthJA

SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current VGS = 10 V VGS = - 4.5 V VGS = 10 V Drain-Source On-Resistance VGS = - 4.5 V VGS = 4.5 V VGS = - 2.5 V Forward Transconductance Diode Forward Voltage gfs VSD rDS(on) V(BR)DSS VGS(th) IGSS IDSS ID(on) N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 - 20 0.015 0.030 0.022 0.048 18 12 0.73 - 0.75 - 1.1 0.018 0.042 0.027 0.060 N-Ch P-Ch N-Ch P-Ch 30 -8 0.8 - 0.45 1.8 - 1.0 100 1 -1 30 - 20 0.015 0.034 0.022 0.048 20 14 0.71 - 0.70 1.1 - 1.1 0.018 0.042 0.027 0.060 S V 30 -8 0.8 - 0.45 100 1 -1 Symbol Channel Si4501ADY Min Typ Max Min Si4501DY Typ Max Unit

nA uA A

Document Number: 72891 Revision: 10-Nov-06

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