73058| Datasheet

By datasheet - February 7th, 2009

73058| Datasheet

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New Product

Si4874BDY
Vishay Siliconix

N-Channel 30-V MOSFET

PRODUCT SUMMARY
VDS (V) 30 rDS(on) () 0.007 at VGS = 10 V 0.0085 at VGS = 4.5 V ID (A) 16 14

FEATURES
TrenchFET Power MOSFETS 100 % Rg Tested

RoHS
COMPLIANT

SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4874BDY-T1-E3 (Lead (Pb)-free) 8 7 6 5 D D D D G

S N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 C TA = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS PD TJ, Tstg 2.7 3.0 2.0 - 55 to 150 16 13 50 1.40 1.6 1.0 W C 10 s 30 20 12 9 A Steady State Unit V

THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. t 10 s Steady State Steady State Symbol RthJA RthJF Typical 34 68 16 Maximum 41 80 21 C/W Unit

Document Number: 73058 S-72687-Rev. B, 24-Dec-07

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