73109| Datasheet

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Si4386DY
New Product

Vishay Siliconix

N-Channel Reduced Qg, Fast Switching MOSFET

PRODUCT SUMMARY
VDS (V) 30 rDS(on) () 0.007 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A) 16 11 13.5 Qg (Typ)

FEATURES
TrenchFET Gen II Power MOSFETS PWM Optimized 100 % Rg Tested

RoHS
COMPLIANT

APPLICATIONS
DC/DC Conversion for PC

SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G

S N-Channel MOSFET

Ordering Information: Si4386DY-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipationa TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs Steady State 30 20 11 9 50 1.3 20 20 1.47 0.95 - 55 to 150 Unit V

16 13 2.8

L = 0.1 mH TA = 25 C TA = 70 C

mJ W C

3.1 2

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. t 10 sec Steady State Steady State Symbol RthJA RthJF Typical 34 71 18 Maximum 40 85 22 Unit C/W

Document Number: 73109 S-60781-Rev. C, 08-May-06

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