73621| Datasheet

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Si2328DS_RC
Vishay Siliconix

R-C Thermal Model Parameters

DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.

R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included.

Note:

For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.

R-C THERMAL MODEL FOR TANK CONFIGURATION

R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance ( C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 22.1294 62.6895 65.0980 18.6120 Thermal Capacitance (Joules/ C) Ambient 1.0200 m 1.3849 5.1769 m 200.4528 m Case N/A N/A N/A N/A Case N/A N/A N/A N/A

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.

Document Number: 73621 Revision 22-Aug-05

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