74094| Datasheet

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Si4430BDY_RC
Vishay Siliconix

R-C Thermal Model Parameters

DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.

R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included.

Note:

For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.

R-C THERMAL MODEL FOR TANK CONFIGURATION

R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance ( C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 1.1396 24.1824 39.3684 16.1694 Ambient 233.2999 m 22.8746 m 427.4473 m 9.7649 Case N/A N/A N/A N/A Case N/A N/A N/A N/A Foot 780.4910 m 5.9983 6.1818 5.9911 Foot 8.9400 m 44.9538 m 326.5027 m 12.3631 m

Thermal Capacitance (Joules/ C)

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.

Document Number: 74094 Revision 31-Aug-05

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