74370| Datasheet

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SPICE Device Model Si1469DH Vishay Siliconix P-Channel 12-V (G-S) MOSFET
CHARACTERISTICS
P-Channel Vertical DMOS Macro Model (Subcircuit Model) Level 3 MOS Apply for both Linear and Switching Application Accurate over the -55 to 125 C Temperature Range Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics

DESCRIPTION
The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125 C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.

SUBCIRCUIT MODEL SCHEMATIC

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 74370 S-70353Rev. A, 26-Feb-07 www.vishay.com 1