74964| Datasheet

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Si1302DL_RC
Vishay Siliconix

R-C Thermal Model Parameters

DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.

R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included.

Note:

For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.

R-C THERMAL MODEL FOR TANK CONFIGURATION

R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance ( C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 281.9587 29.0518 72.9070 65.3672 Ambient 3.8018 m 229.6449 u 333.2771 m 1.2137 m Case N/A N/A N/A N/A Case N/A N/A N/A N/A Foot 57.8141 23.6881 132.3185 125.8739 Foot 853.9395 u 128.9626 u 7.9274 m 5.9823 m

Thermal Capacitance (Joules/ C)

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.

Document Number: 74964 Revision 10-Jan-07

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