81241| Datasheet

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VSMF3710
Vishay Semiconductors

High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
FEATURES
Package type: surface mount Package form: PLCC-2 Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 Peak wavelength: p = 890 nm High reliability High radiant power High radiant intensity
94 8553

Angle of half intensity: = 60 Low forward voltage Suitable for high pulse current operation High modulation band width: fc = 12 MHz Good spectral matching with Si photodetectors Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with

DESCRIPTION
VSMF3710 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD).

APPLICATIONS
High speed IR data transmission High power emitter for low space applications High performance transmissive or reflective sensors

PRODUCT SUMMARY
COMPONENT VSMF3710 Ie (mW/sr) 10 (deg) 60 P (nm) 890 tr (ns) 30

Note Test conditions see table "Basic Characteristics"

ORDERING INFORMATION
ORDERING CODE VSMF3710-GS08 VSMF3710-GS18 Note MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 7500 pcs, 1500 pcs/reel MOQ: 8000 pcs, 8000 pcs/reel PACKAGE FORM PLCC-2 PLCC-2

ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation tp/T = 0.5, tp = 100 us tp = 100 us TEST CONDITION SYMBOL VR IF IFM IFSM PV VALUE 5 100 200 1 160 UNIT V mA mA A mW

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For technical questions, contact: emittertechsupport@vishay.com

Document Number: 81241 Rev. 1.6, 31-Jul-08