88380| Datasheet
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SM15T Series
Vishay General Semiconductor
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES Low profile package Ideal for automated placement Glass passivated chip junction 1500 W peak pulse power capability with a 10/1000 us waveform Available in uni-directional and bi-directional Excellent clamping capability Low inductance Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Solder dip 260 C, 40 s Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATION NOTES A 1500 W (SMC) device is normally selected when the threat of transients is from lightning induced transients, conducted via external leads or I/O lines. It is also used to protect against switching transients induced by large coils or industrial motors. Source impedance at component level in a system is usually high enough to limit the current within the peak pulse current (IPP) rating of this series. In an overstress condition, the failure mode is a short circuit. TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switchin
g and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication.
DO-214AB (SMC)
PRIMARY CHARACTERISTICS
VBR PPPM PD IFSM (uni-directional only) TJ max. 6.8 V to 220 V 1500 W 6.5 W 200 A 150 C
MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use CA suffix (e.g. SM15T12CA). Electrical characteristics apply in both directions.
MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
PARAMETER Peak pulse power dissipation with a 10/1000 us waveform (1)(2) (Fig. 1) Peak power pulse current with a 10/1000 us waveform (1) (Fig. 3) Power dissipation on infinite heatsink TA = 50 C Peak forward surge current 10 ms single half sine-wave uni-directional only (2) Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 C per Fig. 2 (2) Mounted on 0.31 x 0.31" (8.0 x 8.0 mm) copper pads to each terminal SYMBOL PPPM IPPM PD IFSM TJ, TSTG LIMIT 1500 See next table 6.5 200 - 65 to + 150 UNIT W A W A C
Document Number: 88380 Revision: 21-Oct-08
For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

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