88973| Datasheet

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V30100P
Vishay General Semiconductor

Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.57 V at IF = 8 A
FEATURES
TMBS

Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation
3 2 1

Low thermal resistance Solder dip 260 C, 40 s Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs Maximum

TO-247AD (TO-3P)
PIN 1 PIN 3 PIN 2 CASE

PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max. 2 x 15 A 100 V 120 A 0.65 V 150 C

MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified (Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range per device per diode SYMBOL VRRM IF(AV) IFSM TJ, TSTG V30100P 100 30 15 120 - 40 to + 150 UNIT V A A C

Document Number: 88973 Revision: 26-May-08

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