91029| Datasheet

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IRF624, SiHF624
Vishay Siliconix

Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 14 2.7 7.8 Single
D

FEATURES
250 1.1

Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available
Available

RoHS*
COMPLIANT

TO-220

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

S G D S N-Channel MOSFET

ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 IRF624PbF SiHF624-E3 IRF624 SiHF624

ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw TC = 25 C EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT 250 20 4.4 2.8 14 0.40 100 4.4 5.0 50 4.8 - 55 to + 150 300d 10 1.1 W/ C mJ A mJ W V/ns C lbf in N m A UNIT V

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 8.3 mH, RG = 25 , IAS = 4.4 A (see fig. 12). c. ISD 4.4 A, dI/dt 90 A/us, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91029 S-82998-Rev. A, 12-Jan-09 www.vishay.com 1