91087| Datasheet

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IRF9640S, SiHF9640S
Vishay Siliconix

Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 200 VGS = - 10 V 44 7.1 27 Single
S

FEATURES
Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead (Pb)-free Available
Available

0.50

RoHS*
COMPLIANT

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

D2PAK (TO-263)

G D S D P-Channel MOSFET

ORDERING INFORMATION
Package Lead (Pb)-free SnPb Note a. See device orientation. D2PAK (TO-263) IRF9640SPbF SiHF9640S-E3 IRF9640S SiHF9640S D2PAK (TO-263) IRF9640STRLPbFa SiHF9640STL-E3a IRF9640STRLa SiHF9640STLa D2PAK (TO-263) IRF9640STRRPbFa SiHF9640STR-E3a IRF9640STRRa SiHF9640STRa

ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Currenta VGS at - 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT - 200 20 - 11 - 6.8 - 44 1.0 0.025 700 - 11 13 125 3.0 - 5.0 - 55 to + 150 300d UNIT V

W/ C mJ A mJ W V/ns C

EAS IAR EAR TC = 25 C TA = 25 C PD dV/dt TJ, Tstg for 10 s

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 50 V, starting TJ = 25 C, L = 8.7 mH, RG = 25 , IAS = - 11 A (see fig. 12). c. ISD - 11 A, dI/dt 150 A/us, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91087 S09-0046-Rev. A, 19-Jan-09 www.vishay.com 1