91100| Datasheet

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IRFB18N50K, SiHFB18N50K
Vishay Siliconix

Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 120 34 54 Single
D

FEATURES
500 0.26

Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

Available

RoHS*
COMPLIANT

Fully Characterized Capacitance and Avalanche Voltage and Current Low RDS(on) Lead (Pb)-free Available

TO-220

APPLICATIONS
G S G D S N-Channel MOSFET

Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits

ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 IRFB18N50KPbF SiHFB18N50K-E3 IRFB18N50K SiHFB18N50K

ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM Energyb LIMIT 500 30 17 11 68 1.8 EAS IAR EAR TC = 25 C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw 370 17 22 220 7.8 - 55 to + 150 300d 10 W/ C mJ A mJ W V/ns C N A UNIT V

Linear Derating Factor Single Pulse Avalanche Repetitive Avalanche

Currenta

Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque

Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Starting TJ = 25 C, L = 2.5 mH, RG = 25 , IAS = 17 A. c. ISD 17 A, dI/dt 376 A/us, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91100 S09-0015-Rev. A, 19-Jan-09 www.vishay.com 1