91111| Datasheet

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IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L
Vishay Siliconix

Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 31 4.6 17 Single
D

FEATURES
600 2.2

Surface Mount (IRFBC30S, SiHFBC30S) Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt Rating 150 C Operating Temperature Fast Switching Fully Avalanche Rated Lead (Pb)-free Available

Available

RoHS*
COMPLIANT

I2PAK (TO-262)

D2PAK (TO-263)

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC30L, SiHFBC30L) is a available for low-profile applications.

G G D S

G D S S N-Channel MOSFET

ORDERING INFORMATION
Package Lead (Pb)-free SnPb Note a. See device orientation. D2PAK (TO-263) IRFBC30SPbF SiHFBC30S-E3 IRFBC30S SiHFBC30S D2PAK (TO-263) IRFBC30STRLPbFa SiHFBC30STL-E3a I2PAK (TO-262) IRFBC30LPbF SiHFBC30L-E3 IRFBC30L SiHFBC30L

ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TA = 25 C TC = 25 C VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg for 10 s LIMIT 600 20 3.6 2.3 14 0.59 290 3.6 7.4 3.1 74 3.0 - 55 to + 150 300d UNIT V

A W/ C mJ A mJ W V/ns C

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 41 mH, RG = 25 , IAS = 3.6 A (see fig. 12). c. ISD 3.6 A, dI/dt 60 A/us, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. Uses IRFBC30, SiHFBC30 data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91111 S09-0038-Rev. A, 19-Jan-09 www.vishay.com 1