91182| Datasheet

91182| Datasheet

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IRFIBC40G, SiHFIBC40G
Vishay Siliconix

Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 60 8.3 30 Single
D

FEATURES
600 1.2

Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) Dynamic dV/dt Rating Lead (Pb)-free Available

Available

RoHS*
COMPLIANT

TO-220 FULLPAK

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

G

S

G D S

N-Channel MOSFET

ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 FULLPAK IRFIBC40GPbF SiHFIBC40G-E3 IRFIBC40G SiHFIBC40G

ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 600 20 3.5 2.2 14 0.32 500 3.5 4.0 40 3.0 - 55 to + 150 300d 10 1.1 UNIT V

A W/ C mJ A mJ W V/ns C lbf in N m

TC = 25 C

for 10 s 6-32 or M3 screw

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD= 50 V, starting TJ = 25 C, L = 74 mH, RG = 25 , IAS = 3.5 A (see fig. 12). c. ISD 6.2 A, dI/dt 80 A/us, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91182 S-81273-Rev. A, 16-Jun-08 www.vishay.com 1


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