91208| Datasheet

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IRFP22N60K, SiHFP22N60K
Vishay Siliconix

Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 150 45 76 Single
D

FEATURES
600 0.24

Hard Switching Primary or PFS Switch Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Available

RoHS*
COMPLIANT

Fully Characterized Capacitance and Avalanche Voltage and Current Enhanced Body Diode dV/dt Capability Lead (Pb)-free Available

TO-247

BENEFITS
Switch Mode Power Supply (SMPS) Uninterruptible Power Supply
S N-Channel MOSFET

S D G

High Speed Power Switching Motor Drive

ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-247 IRFP22N60KPbF SiHFP22N60K-E3 IRFP22N60K SiHFP22N60K

ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Repetitive Avalanche Currenta Energya TC = 25 C EAS IAR EAR PD dV/dt TJ, Tstg for 10 s VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT 600 30 22 14 88 2.9 380 22 37 370 15 - 55 to + 150 300d W/ C mJ A mJ W V/ns C A UNIT V

Maximum Power Dissipation Peak Diode Recovery dV/dtc

Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 C, L = 1.5 mH, RG = 25 , IAS = 22 A (see fig. 12). c. ISD 22 A, dI/dt 360 A/us, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91208 S-81274-Rev. A, 16-Jun-08 www.vishay.com 1