91301| Datasheet

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IRL620, SiHL620
Vishay Siliconix

Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 16 2.7 9.6 Single 200 0.80

FEATURES
Dynamic dV/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V Fast Switching Ease of paralleling Simple Drive Requirements Lead (Pb)-free Available
D
Available

RoHS*
COMPLIANT

TO-220

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

S G D S N-Channel MOSFET

ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 IRL620PbF SiHL620-E3 IRL620 SiHL620

ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VGS at 5.0 V TC = 25 C TC = 100 C SYMBOL VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 10 5.2 3.3 21 0.40 125 5.2 5.0 50 5.0 - 55 to + 150 300d 10 1.1 UNIT V A W/ C mJ A mJ W V/ns C lbf in N m

TC = 25 C

for 10 s 6-32 or M3 screw

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 6.9 mH, RG = 25 IAS = 5.2 A (see fig. 12c). c. ISD 5.2 A, dV/dt 120 A/us, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91301 S-09-0024-Rev. A, 19-Jan-09 www.vishay.com 1