91373| Datasheet

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Preliminary

SiHP22N60S, SiHF22N60S
Vishay Siliconix

Power MOSFET
PRODUCT SUMMARY
VDS at TJ max. (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 96 17 30 Single
D

FEATURES
650 0.19

High EAR Capability Lower Figure-of-Merit Ron x Qg 100 % Avalanche tested High Peak Current Capability dV/dt Ruggedness Effective Coss Specified Improved Transconductance Improved trr/Qrr Improved Gate Charge High Power Dissipation Capability Lead (Pb)-free Available

TO-220

TO-220 FULLPAK

S G D

GD S
S N-Channel MOSFET

ORDERING INFORMATION
Package TO-220 TO-220 FULLPAK SiHP22N60S-E3 SiHF22N60S-E3

ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Linear Derating Factor Single Pulse Avalanche Energyc Repetitive Avalanche Energy Maximum Power Dissipation Peak Diode Recovery dV/dtd Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e for 10 s Notes a. Limited by maximum temperature. b. Repetitive rating; pulse width limited by maximum junction temperature. c. VDD = 50 V, starting TJ = 25 C, L = 13.8 mH, RG = 25 , IAS = 10 A. d. ISD 22 A, dI/dt 340 A/us, VDD VDS, TJ 150 C. e. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91373 S-Pending-Rev. A, 27-Oct-08 TO-220 FULLPAK TO-220 FULLPAK EAS EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT 600 20 22 14 88 2.2 0.32 690 see fig. 17 280 40 7.3 - 55 to + 150 300 W V/ns C W/ C mJ A UNIT V

Work-in-Progress

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