gb25rf12| Datasheet

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GB25RF120K
Vishay High Power Products

IGBT PIM Module, 25 A
FEATURES

1200 V 2.4 V > 10 us 25 A

ECONO2 PIM

Low VCE(on) non punch through IGBT technology Low diode VF 10 us short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Positive VCE(on) temperature coefficient Ceramic DBC substrate Low stray inductance design Speed 8 to 60 kHz Totally lead (Pb)-free Designed and qualified for industrial market

RoHS
COMPLIANT

PRODUCT SUMMARY
VCES VCE(on) tsc at TJ = 150 C IC at TC = 80 C

BENEFITS
Benchmark efficiency for motor control Rugged transient performance Low EMI, requires less snubbing Direct mounting to heatsink PCB solderable terminals Low junction to case thermal resistance

ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector to emitter voltage Gate to emitter voltage Continuous collector current Inverter Pulsed collector current See fig. C.T.5 Diode maximum forward current Power dissipation Repetitive peak reverse voltage Input rectifier Average output current Surge current (non-repetitive) I2t (non-repetitive) Collector to emitter voltage Gate to emitter voltage Continuous collector current Brake Pulsed collector current See fig. C.T.5 Power dissipation Maximum operating junction temperature Storage temperature range Isolation voltage ICM IFM PD VRRM IF(AV) IFSM I2 t VCES VGES IC ICM PD TJ TStg VISOL AC (1 min) One IGBT 25 C TC = 25 C TC = 80 C 50/60 Hz sine pulse 80 C Pulsed One IGBT 25 C SYMBOL VCES VGES IC TC = 25 C TC = 80 C TEST CONDITIONS MAX. 1200 20 40 25 80 80 198 1600 20 250 316 1200 20 40 25 80 198 150 - 40 to + 125 2500 UNITS V

A A A W V A A2s V

Rated VRRM applied, 10 ms, sine pulse

A A W C V

Document Number: 93649 Revision: 10-Sep-08

For technical questions, contact: ind-modules@vishay.com

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