hfa210nj| Datasheet

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HFA210NJ60CPbF
Vishay High Power Products

HEXFRED Ultrafast Soft Recovery Diode, 210 A
FEATURES
Lug terminal anode 1 Lug terminal anode 2

Very low Qrr and trr Lead (Pb)-free Designed and qualified for industrial level

RoHS
COMPLIANT

BENEFITS
Base common cathode

Reduced RFI and EMI Reduced snubbing

TO-244

DESCRIPTION
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dI/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.

PRODUCT SUMMARY
IF(AV) VR IF(DC) at TC 210 A 600 V 120 A at 100 C

ABSOLUTE MAXIMUM RATINGS
PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Non-repetitive avalanche energy Maximum power dissipation Operating junction and storage temperature range SYMBOL VR IF IFSM EAS PD TJ, TStg TC = 25 C TC = 100 C Limited by junction temperature L = 100 uH, duty cycle limited by maximum TJ TC = 25 C TC = 100 C TEST CONDITIONS MAX. 600 235 120 600 2.2 463 185 - 55 to + 150 mJ W C A UNITS V

ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 C unless otherwise specified)
PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 uA IF = 105 A Maximum forward voltage VFM IF = 210 A IF = 105 A, TJ = 125 C Maximum reverse leakage current Junction capacitance Series inductance IRM CT LS TJ = 125 C, VR = 480 V VR = 200 V See fig. 2 See fig. 3 See fig. 1 MIN. 600 TYP. 1.38 1.6 1.3 1.8 200 6.0 MAX. 1.9 2.25 1.56 6.0 300 mA pF nH V UNITS

From top of terminal hole to mounting plane

Document Number: 94062 Revision: 01-Aug-08

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