sd101aws| Datasheet

sd101aws| Datasheet

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SD101AWS-V/101BWS-V/101CWS-V
Vishay Semiconductors

Small Signal Schottky Diodes

Features
For general purpose applications The SD101 series is a Metal-on-silicon e3 Schottky barrier device which is protected by a PN junction guard ring The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications These diodes are also available in the Mini-MELF case with type designations LL101A to LL101C, in the DO35 case with type designations SD101A to SD101C and in the SOD123 case with type designations SD101AW-V to SD101CW-V. Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

20145

Mechanical Data
Case: SOD323 Plastic case Weight: approx. 4.3 mg Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box

Parts Table
Part SD101AWS-V SD101BWS-V SD101CWS-V Ordering code SD101AWS-V-GS18 or SD101AWS-V-GS08 SD101BWS-V-GS18 or SD101BWS-V-GS08 SD101CWS-V-GS18 or SD101CWS-V-GS08 Type Marking SA SB SC Remarks Tape and Reel Tape and Reel Tape and Reel

Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Peak inverse voltage Test condition Part SD101AWS-V SD101BWS-V SD101CWS-V Power dissipation (Infinite Heat Sink) Forward continuous current Maximum single cycle surge
1)

Symbol VRRM VRRM VRRM Ptot IF

Value 60 50 40 150
1)

Unit V V V mW mA A

30 2

10 us square wave

IFSM

Valid provided that electrodes are kept at ambient temperature

Document Number 85680 Rev. 1.6, 15-Sep-06

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