si1467dh| Datasheet

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Si1467DH
Vishay Siliconix

P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY
VDS (V) - 20 RDS(on) () 0.090 at VGS = - 4.5 V 0.115 at VGS = - 2.5 V 0.150 at VGS = - 1.8 V ID (A)c - 1.6 - 1.6 - 1.6 9.0 nC Qg (Typ.)

FEATURES
TrenchFET Power MOSFET 100 % Rg Tested

RoHS
APPLICATIONS
Load Switch for Portable Devices
COMPLIANT

SOT-363 SC-70 (6-LEADS)
S D 1 6 D Marking Code AN D 2 5 D Part # Code D P-Channel MOSFET XX YY Lot Traceability and Date Code

3 Top View

Ordering Information: Si1467DH-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C Continuous Drain Current (TJ = 150 C)a, b TC = 70 C TA = 25 C TA = 70 C Pulsed Drain Current (10 us Pulse Width) Continuous Source-Drain Diode Currenta, b TC = 25 C TA = 25 C TC = 25 C Maximum Power Dissipationa, b TC = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 20 8 - 1.6c - 1.6c - 1.6a, b, c - 1.6a, b, c - 6.5c - 1.6c - 1.25a, b, c 2.78 1.78 1.5a, b 1a, b - 55 to 150 260 C W A Unit V

THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta, d t5s Steady State Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Package limited. d. Maximum under Steady State conditions is 125 C/W. Document Number: 68663 S-81216-Rev. A, 02-Jun-08 www.vishay.com 1 Symbol RthJA RthJF Typical 60 34 Maximum 80 45 Unit C/W