si3407dv| Datasheet

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Si3407DV_RC
Vishay Siliconix

R-C Thermal Model Parameters

DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-SPICE, these values have matching characteristic curves to the single-pulse transient thermal impedance curves for the MOSFET.

These RC values can be used in the P-SPICE simulation to evaluate the thermal behavior of the MOSFET junction temperature under a defined power profile. These techniques are described in Application Note AN609, "Thermal Simulation of Power MOSFETs on the P-Spice Platform."

R-C THERMAL MODEL FOR TANK CONFIGURATION

R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance ( C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 11.8734 45.8975 24.6642 27.5649 Ambient 1.8936 m 9.9473 m 1.6611 3.0050 Case N/A N/A N/A N/A Case N/A N/A N/A N/A Foot 7.6190 2.1850 9.7777 10.4183 Foot 6.2299 m 455.2646 u 29.9265 m 8.6093 m

Thermal Capacitance (Joules/ C)

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.

Document Number: 68676 Revision: 22-Apr-08

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