si4431bd| Datasheet

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Si4431BDY
New Product

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY
VDS (V) - 30 rDS(on) () 0.030 at VGS = - 10 V 0.050 at VGS = - 4.5 V ID (A) - 7.5 - 5.8

FEATURES
TrenchFET Power MOSFETs
Pb-free Available

RoHS*
COMPLIANT

SO-8
S S S G 1 2 3 4 Top View D Ordering Information: Si4431BDY-T1 Si4431BDY-T1-E3 (Lead (Pb)-free) P-Channel MOSFET 8 7 6 5 D D D D G S

ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 C TA = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS PD TJ, Tstg - 2.1 2.5 1.6 - 55 to 150 - 7.5 - 6.0 - 30 - 1.2 1.5 0.9 W C 10 sec Steady State - 30 20 - 5.7 - 4.6 A Unit V

THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes: a. Surface Mounted on 1" x 1" FR4 Board. t 10 sec Steady State Steady State Symbol RthJA RthJF Typical 38 70 22 Maximum 50 85 28 Unit C/W

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72092 S-70315-Rev. B, 12-Feb-07

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