si5938du| Datasheet

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Si5938DU_RC
Vishay Siliconix

R-C Thermal Model Parameters

DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.

R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included.

Note:

For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.

R-C THERMAL MODEL FOR TANK CONFIGURATION

R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance ( C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient Ch1 29.1249 6.9670 18.5813 50.1264 Ambient Ch1 4.5843 m 283.6337 u 107.8785 m 1.5756 Ambient Ch2 29.1249 6.9670 18.5813 50.1264 Ambient Ch2 4.5843 m 283.6339 u 107.8774 m 1.5756 Foot N/A N/A N/A N/A Foot N/A N/A N/A N/A Case Ch1 12.4930 u 7.8166 3.8770 3.3831 Case Ch1 3.3132 u 2.6715 m 164.1373 u 3.3150 m Case Ch2 12.4930 u 7.8166 3.8770 3.3831 Case Ch2 3.3132 u 2.6715 m 164.1373 u 3.3150 m

Thermal Capacitance (Joules/ C)

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.

Document Number: 74266 Revision: 27-Jun-07

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