si7636dp| Datasheet

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Si7636DP
Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY
VDS (V) 30 rDS(on) () 0.004 at VGS = 10 V 0.0048 at VGS = 4.5 V ID (A) 28 25 36 Qg (Typ)

FEATURES
Ultra-Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology Qg Optimized New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % Rg Tested

RoHS
COMPLIANT

APPLICATIONS
PowerPAK SO-8

6.15 mm

S 1 2 3 S S

5.15 mm

Low-Side DC/DC Conversion - Notebook - Server - Workstation Synchronous Rectifier, POL
D

G 4

D 8 7 6 5 D D D

Bottom View Ordering Information: Si7636DP-T1-E3 (Lead (Pb)-Free)

S N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Current (10 us Pulse Width) Continuous Source Current (Diode Conduction)a Avalanche Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c L = 0.1 mH TA = 25 C TA = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS IAS PD TJ, Tstg 10 sec Steady State 30 20 17 13 60 1.7 50 1.9 1.2 - 55 to 150 260 Unit V

28 22 4.3 5.2 3.3

W C

THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient
a

Symbol t 10 sec Steady State Steady State RthJA RthJC

Maximum Junction-to-Case (Drain)

Typical 19 52 1.3

Maximum 24 65 1.8

Unit C/W

Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72768 S-70531-Rev. F, 26-Mar-07 www.vishay.com 1